神马福利影片

Background & Research Interests

I joined the Robertson Group in October 2022. My research interests are in the structural and electronic properties of 2D layered materials, particularly the transition metal chalcogenides. My primary focus is in better understand the physical mechanisms behind the hysteretic resistance switching behaviour of Molybdenum Disulfide memristors, employing operando atomic resolution electron microscopy techniques to do so. I also work on the study of air-sensitive 2D materials which have applications in 2D ferroelectric memory. I investigate the mechanisms by which they degrade in air and how they may be protected from the ambient environment to prevent degradation so as to enhance their scalability for memory applications.

I obtained my MPhys degree from the university of Warwick in 2022 during which, I studied the quantisation of electrical conductance in transition metal nanowires and organic molecules. The experimental setup I developed during this project is now used in the undergraduate teaching laboratories.

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Metal Ion Migration

Through direct observation with electron microscopy, we have have shown the possible role of metal atoms from device contacts behaving as mobile ions like in synapses of the human brain. The image above shows a metal ion which has reversibly migrated into the device upon the application of a voltage. These findings pave the way for truly "brain-like" computing to deliver AI more effectively and energy efficiently with MoS₂ memristors. Such devices also have implications for prosthetics with a direct link to the patients brain, revolutionising rehabilitation and improving the understanding of the brain-computer interface.

Strain Mediated Switches

The gif above shows creases in the channel of a 2D material device under an applied voltage. By applying a voltage these creases can be moved in a controllable manner, allowing for the precise tuning of electrical properties. This allows for controllable switching on and off in a new generation of electrical devices: memristors. These devices open up he possibility for more energy efficient and lower power computing, with device integration densities nearly 100 times more compact than their silicon-based counterparts.